Quantum Dot (QD) gate Si-FETs with Self-Assembled GeOX Cladded Germanium Quantum Dots

This paper presents preliminary data on the transfer and output characteristics of a GeOXcladded Ge quantum dot (QD) gate Si MOSFET. The MOSFET is formed by depositing cladded QDs above the SiO2 gate insulator formed on pSi region, sandwiched between n-type source and drain. Ge (~ 2 to 8 nm) nanoparticles, cladded with GeOX (~1nm) layers, are deposited using site-specific self-assembly. In addition, threshold shift in a nonvolatile memory structure, having cladded Ge dots, is also presented. The aim here is to fabricate floating QD gate high performance nonvolatile memory scalable to 22 nm processing.